黄绿光发光二极管光衰性能研究  

Study on the Degradation of Yellow-green Light-emitting Devices

作　　者：高鹏 冯彦斌 李维环 吴超瑜 高文浩 付贤松[1] 宁振动 GAO Peng;FENG Yanbin;LI Weihuan;WU Chaoyu;GAO Wenhao;FU Xiansong;NING Zhendong(School of Electronics and Information Engineering,Tianjin Polytechnic University,Tianjin,300160,CHN;Tianjin Sanan optoelectronics Co.,Ltd,Tianjin,300160,CHN;Department of Physics,Xiamen University,Xiamen,Fujian,361005,CHN)

机构地区：[1]天津工业大学电子与信息工程学院,天津300160 [2]天津三安光电有限公司,天津300160 [3]厦门大学物理系,福建厦门361005

出　　处：《固体电子学研究与进展》2019年第3期203-206,共4页Research & Progress of SSE

基　　金：天津市科技支撑、新材料重大专项项目(17YFZCGX00330,18ZXCLGX00080)

摘　　要：AlGaInP是GaAs基LED有源区主要材料,广泛应用于黄绿光至红光波段的LED。但在短波段尤其是黄绿光波段(565~575nm),因其材料组成较接近间接带隙,其发光效率和稳定性存在问题。目前黄绿光功率衰减以俄歇复合损耗、非复合辐射中心损耗、载流子损耗为主。所以研究相同生长温度不同阱垒厚度、量子阱相同厚度不同生长温度、P型掺杂层掺杂浓度对发光光衰的影响。发现较薄的MQW阱垒厚度、较高的MQW生长温度及P-space后端P型层前端插入一层20nm厚度,1.7×10^18cm^-3浓度的高掺杂层三种方案可以改善黄绿光发光二极管光衰性能。AlGaInP was the main material of GaAs-based LED active region and was widely used for LED in yellow-green light to red light. However, in the short wavelength band, especially in the yellow-green band(565~575 nm), its luminous efficiency and stability had some problems because of its material composition close to the indirect bandgap. At present, the yellow-green optical decay was dominated by Auger composite loss, non-composite radiation center loss, and carrier loss. Therefore, the effects of different well/barrier thicknesses at the same growth temperature, different growth temperatures of multiple quantum wells, and the doping concentration of P-type doping layers on luminescence decay were studied. It is found that three ways of thinner MQW barrier thickness, higher MQW growth temperature and inserting a layer of 20 nm thickness, 1.7×10^18 cm^-3 concentration of highly doped layer between P-space layer and P-type layer can improve yellow-green light-emitting diode light decay performance.

关 键 词：AlGaInP发光二级管 黄绿光 光衰 多量子阱 

分 类 号：TN312.8[电子电信—物理电子学]