GaN基发光二极管研究进展与可靠性问题  

Research Progress and Reliability of GaN-based Light Emitting Diodes

作　　者：任舰 Ren Jian

机构地区：[1]淮阴师范学院计算机科学与技术学院,江苏淮安223300

出　　处：《数码设计》2018年第14期80-81,共2页Peak Data Science

基　　金：江苏省高等学校自然科学研究面上项目(17KJB510007).

摘　　要：凭借着发光效率高、使用寿命长、稳固性好和无化学污染等优点,GaN基发光二极管(LED)已被广泛应用于绿色智慧照明、仪器仪表和可见光通信等领域。随着芯片异形法、表面粗糙技术和光子晶体LED等技术的采用,GaN基LED性能获得不断提升。但是,效率droop效应和大漏电流等可靠性问题严重限制其进一步应用。为了提高器件可靠性,多种模型被提出,但是由于GaN材料内部缺陷非常复杂,可靠性问题仍待进一步研究。在本文中,重点阐述了GaN基LED发光效率的研究进展以及仍然存在的电学可靠性问题。GaN-based light-emitting diodes(LEDs)have been widely used in green smart lighting,instrumentation and visible light communication,etc.due to their high luminous efficiency,long service life,good stability and no chemical pollution.With the adoption of chip profile,surface roughness and photonic crystal LED technology,GaN-based LED performance has been continuously improved.However,reliability issues such as efficiency droop effects and large leakage currents severely limit their further application.In order to improve the reliability of the device,various models have been proposed,but since the internal defects of the GaN material are very complicated,the reliability problem remains to be further studied.In this paper,the research progress of GaN-based LED luminescence efficiency and the remaining electrical reliability problems are highlighted.

关 键 词：GAN 发光二级管 可靠性 

分 类 号：TP211[自动化与计算机技术—检测技术与自动化装置]