Ⅲ族氮化物半导体材料的制备及应用研究进展  

Research Progress on Preparation and Application of Group Ⅲ Nitride Semiconductor Nanomaterials

作　　者：杨帆 王美琪 关卫省 YANG Fan;WANG Mei-qi;GUAN Wei-sheng(Key Laboratory of Subsurface Hydrology and Ecological Effects in Arid Region,School of Environmental Sciences and Engineering,Chang’an University,Xi’an 710054,China)

机构地区：[1]长安大学环境科学与工程学院旱区地下水文与生态效应教育部重点实验室

出　　处：《人工晶体学报》2019年第7期1203-1207,共5页Journal of Synthetic Crystals

基　　金：国家自然基金面上项目(41472220);陕西省自然科学基金(2017JM2014)

摘　　要：随着第二代半导体的逐渐落后,Ⅲ族氮化物半导体作为具有优良性质的最新一代的半导体材料,已经登上历史的舞台。综述重点归纳了以BN、AlN、GaN、InN为代表的Ⅲ族氮化物纳米材料的典型制备方法、目前的应用现状,并对存在的问题加以总结。With the gradual lag of second-generation semiconductors,GroupⅢnitride semiconductors have entered the historical arena as the latest generation of semiconductor materials with excellent properties.The review focuses on the typical preparation methods and current application status of GroupⅢnitride nanomaterials represented by BN,AlN,GaN and InN,and summarizes the existing problems.

关 键 词：Ⅲ族氮化物 半导体纳米材料 制备方法 应用 

分 类 号：TB383[一般工业技术—材料科学与工程]