The predicaments and expectations in development of magnetic semiconductors  

作　　者：Qiang Cao Shishen Yan 

机构地区：[1]Spintronics Institute, University of Jinan

出　　处：《Journal of Semiconductors》2019年第8期9-19,共11页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China (Grant Nos. 11434006, and 51871112);the National Basic Research Program of China (Grant No. 2015CB921502);the 111 Project (Grant No. B13029);Shandong Provincial Natural Science Foundation (Grant No. ZR2018MA035)

摘　　要：Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room temperature magnetic semiconductors with strong and controllable s, p-d exchange interaction. With this s, p-d exchange interaction, one can utilize the spin degree of freedom to design applicable spintronics devices with very attractive functions that are not available in conventional semiconductors. Here, we first review the progress in understanding of this particular material and the dilemma to prepare a room temperature magnetic semiconductor. Then we discuss recent experimental progresses to pursue strong s, p-d interaction to realize room temperature magnetic semiconductors, which are achieved by introducing a very high concentration of magnetic atoms by means of low-temperature nonequilibrium growth.Over the past half a century, considerable research activities have been directing towards the development of magnetic semiconductors that can work at room temperature. These efforts were aimed at seeking room temperature magnetic semiconductors with strong and controllable s, p–d exchange interaction. With this s, p–d exchange interaction, one can utilize the spin degree of freedom to design applicable spintronics devices with very attractive functions that are not available in conventional semiconductors. Here, we first review the progress in understanding of this particular material and the dilemma to prepare a room temperature magnetic semiconductor. Then we discuss recent experimental progresses to pursue strong s, p–d interaction to realize room temperature magnetic semiconductors, which are achieved by introducing a very high concentration of magnetic atoms by means of low-temperature nonequilibrium growth.

关 键 词：MAGNETIC SEMICONDUCTORS s  p-d interaction high concentration of MAGNETIC ATOMS low temperature NONEQUILIBRIUM growth SEMICONDUCTOR SPINTRONICS 

分 类 号：TN[电子电信]