基于MOSFET器件的开机浪涌电流抑制电路设计  

Design of suppression circuit for inrush current based on MOSFET

作　　者：姜东升[1] 邱羽玲 JIANG Dong-sheng;QIU Yu-ling(Beijing Institute of Spacecraft System Engineering, China Academy of Space Technology, Beijing 100094, China)

机构地区：[1]中国空间技术研究院总体部

出　　处：《电源技术》2019年第7期1216-1218,共3页Chinese Journal of Power Sources

摘　　要：近年来,宇航用功率继电器发生了多起触点粘连故障,分析表明星上电子设备为提高电源品质,在输入端装有大容量滤波电容,继电器在接通时,电容在上电瞬间近似短路,继电器触点有较大的浪涌电流流过,该浪涌电流导致继电器触点产生熔焊(粘连)失效。通过分析电路浪涌电流产生机理,提出了两种基于场效应管(MOSFET)器件的可靠有效的浪涌电流抑制电路,并对两种电路进行了分析。该研究对于抑制电源加电瞬间浪涌电流,提高供电的可靠性和安全性具有重要意义。In recent years, some types of power relays for spacecraft fail due to the contact welding during testing and on orbit. Inrush current, which is caused by capacitive load, does exist when the relay is closed, and it may cause the contact welding failure of the relay. The reason for inrush current was discussed and two suppression circuits for inrush current based on MOSFET were given. It's helpful for suppressing inrush current and improving the reliability and safety of spacecraft power supply.

关 键 词：浪涌电流 触点粘连 MOSFET器件 

分 类 号：TM13[电气工程—电工理论与新技术]