InGaAs/GaAs/InGaP量子阱激光器的激光单模特性研究  

Laser Single-Mode Characteristics of InGaAs/GaAs/InGaP Quantum Well Lasers

作　　者：汤瑜 曹春芳[1] 赵旭熠 杨锦 李金友 龚谦[1,2] 王海龙 Tang Yu;Cao Chunfang;Zhao Xuyi;Yang jin;Li jinyou;Gong Qian;Wang Hailong(State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem andInformation Technology,Chinese Academy of Sciences,Shanghai 200050,China;University of Chinese Academy of Sciences,Beijing 100049,China;Shandorig Provijicial Key Laboratory of Laser Polarizatioyi and Inform ation Technology,School of Physics and Physical Engineering,Qufu Normal University,Qufu,Shandong 273165,China)

机构地区：[1]中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海200050 [2]中国科学院大学,北京100049 [3]曲阜师范大学物理工程学院,山东省激光偏光与信息技术重点实验室,山东曲阜273165

出　　处：《激光与光电子学进展》2019年第13期172-176,共5页Laser & Optoelectronics Progress

基　　金：国家自然科学基金(61674096)

摘　　要：报道了InGaAs/GaAs/InGaP量子阱激光器的激光光谱研究,并在法布里-珀罗(FP)腔激光器中发现了单模工作特性,且该单模工作特性可以在较大的工作电流范围内(36~68mA)存在,在一定的电流(14mA)范围内保持单模可调谐。在20℃,当器件注入电流为62 mA时,激光器单模工作情况下的最大边模抑制比(SMSR)为29.8dB,在其他电流条件下该器件的边模抑制比也都大于20dB。激光器在单模工作时,器件最大输出功率(单面)达到12.5mW。对于具有相同结构和材料的FP腔激光器来说,在不同条宽或腔长的器件中都观察到上述单模工作特性。这一特性在一些单频激光的应用系统中具有较大的应用价值。In this study, we investigate the laser spectra of the InGaAs/GaAs/InGaP quantum well lasers. Single mode operation characteristics can be observed in the Fabry-Perot (FP) cavity laser, which exist in a large operating current range (36-68 mA ). Mode-hop free wavelength tuning can be observed at a current of 14 mA. The maximum side-mode suppression ratio (SMSR) under single-mode operation of the laser is 29.8 dB at 20℃ with an injection current of 62 mA , while SMSR values are generally greater than 20 dB under other injection currents. Furthermore, the maximum output power (single side) of the laser under single-mode operation reaches 12.5 mW . Accordingly, the aforementioned single-mode operation characteristics can be observed for the FP cavity lasers fabricated with similar structures and materials in devices exhibiting different strip widths and cavity lengths. This unique feature results in considerable application potential in applications requiring a single-frequency laser source.

关 键 词：激光器 量子阱激光器 法布里-珀罗腔 InGaAs/GaAs/InGaP 单模 边模抑制比 

分 类 号：TN248.4[电子电信—物理电子学]