高性能CuSCN无机空穴传输层的制备及其在平面异质结双面钙钛矿太阳电池中的初步应用  被引量:2

Fabrication of high-performance CuSCN inorganic hole transporting layer and its preliminary application in planar heterojunction bifacial perovskite solar cell

在线阅读下载全文

作  者:范琳[1] 王鹏飞 贺礼 江海鹏 杨丽丽[1] 王奉友 刘晓艳[1] 杨景海[1] FAN Lin;WANG Peng-fei;He Li;JIANG Hai-peng;YANG Li-li;WANG Feng-you;LIU Xiao-yan;YANG Jing-hai(College of Physics,Jilin Normal University,Siping 136000,China)

机构地区:[1]吉林师范大学物理学院

出  处:《吉林师范大学学报(自然科学版)》2019年第3期17-25,共9页Journal of Jilin Normal University:Natural Science Edition

基  金:国家自然科学基金项目(61775081);吉林省教育厅“十三五”科学技术研究项目(JJKH20190998KJ);吉林省科技发展计划项目(20180519016JH)

摘  要:低成本、宽带隙p型无机CuSCN凭借其卓越的透过率和优异的空穴迁移率,已成为目前双面钙钛矿太阳电池中一种理想的空穴传输层(HTL)材料.CuSCN无机HTL的结晶质量、表/界面性质及光、电特性是影响电池双面性能参数的关键因素.本文提出采用缓慢挥发法促使CuSCN充分结晶生长并且形成均匀覆盖的高质量、大晶粒CuSCN晶体薄膜,有效改善CuSCN与钙钛矿和背电极之间的界面特性,显著提高光生载流子抽取、传输与收集性能.通过调控CuSCN无机HTL厚度及其工艺条件,优化得到前面效率为12.78%和后面效率为9.79%的n-i-p型平面异质结双面钙钛矿太阳电池.整个电池制备过程不涉及任何高成本材料和高温工艺,为研发高效柔性、半透明及钙钛矿基叠层太阳电池组件奠定了坚实基础,表现出良好的商业转化应用前景和重要的研究价值.Low-cost,wide-band gap p-type inorganic CuSCN hole transporting layer(HTL) has become an ideal hole-transporting material for bifacial perovskite solar cell due to its excellent transmittance and hole mobility.The crystallization quality,surface/interface properties and photo-voltaic characteristics of CuSCN HTL were the key factors affecting the performance parameters of bifacial devices.Here,a high-quality CuSCN film with high crystallinities and uniform coverage via slow evaporation method was demonstrated,which could effectively optimize the interfacial contact of between the perovskite and the rear electrode for efficient charge transport.Moreover,a n-i-p planar bifacial perovskite solar cell using about 200 nm-thick CuSCN HTL was fabricated,which eventually permitted a satisfactory PCE of 12.18% and 9.79% for the front and rear illumination.It was also worth mentioning that the low-temperature and the low-cost processes would be desirable for a wide range of applications,such as flexible and tandem solar cells on thermal sensitive substrates.

关 键 词:CuSCN无机空穴传输层 平面异质结双面钙钛矿太阳电池 缓慢挥发法 低成本 

分 类 号:O472[理学—半导体物理]

 

参考文献:

正在载入数据...

 

二级参考文献:

正在载入数据...

 

耦合文献:

正在载入数据...

 

引证文献:

正在载入数据...

 

二级引证文献:

正在载入数据...

 

同被引文献:

正在载入数据...

 

相关期刊文献:

正在载入数据...

相关的主题
相关的作者对象
相关的机构对象