厚度对钇掺杂氧化铪薄膜性质的影响  

Effects of Film Thickness on The Properties of Y ∶ HfO2 Thin Films

作　　者：赵鹏 周大雨[1] 孙纳纳 ZHAO Peng;ZHOU Dayu;SUN Nana(Key Laboratory of Materials Modification by Laser,Ion,and Electron Beams (Ministry of Education),School of Materials Science and Engineering,Dalian University of Technology,Dalian 116024,China)

机构地区：[1]大连理工大学材料科学与工程学院三束材料改性教育部重点实验室

出　　处：《中国陶瓷》2019年第8期61-65,共5页China Ceramics

基　　金：国家自然科学基金(51672032)

摘　　要：通过中频磁控溅射在p型(100)硅基片上沉积了不同厚度的Y掺杂HfO2(Y∶HfO2)薄膜。利用X射线光电子能谱(XPS)分析薄膜的Y掺杂浓度及元素结合状态。掠入射X射线衍射(GIXRD)分析表明,3.25 mol.%的Y掺杂HfO2薄膜相结构为立方相。利用X射线反射率(XRR)测量得到了不同溅射时间的薄膜厚度、密度和粗糙度。电性能测试表明,Y掺杂HfO2薄膜基电容器介电常数随膜厚的增大而增大。基于界面层分压原理,详细讨论了SiO2界面层对薄膜介电特性的影响。Yttrium-doped HfO2(Y∶HfO2)thin films with different thickness were deposited on p-type(100)silicon substrate.The composition and chemical states of each element in the films were investigated by X-ray photoelectron spectroscopy(XPS).The grazing angle incidence X-ray diffraction(GIXRD)patterns indicated the cubic structure HfO2 existed while the Y content was 3.25 mol.%.The thickness,density and roughness of thin films with different sputtering time were obtained from X-ray reflectivity(XRR)patterns.The results of electrical tests suggested the dielectric constant values of HfO2 based capacitors increased with the increase of films’thickness.Based on the principle of voltage distribution between interfaces,the influence of SiO2 interfacial layer was discussed in detail.

关 键 词：HFO2薄膜 厚度 成分 相结构 电性能 

分 类 号：TQ174.76[化学工程—陶瓷工业] TB43[化学工程—硅酸盐工业]