MgZnO∶N薄膜中Mg对N掺杂热稳定性的影响  

Effect of magnesium on thermal stability of N-doped MgZnO films

作　　者：胡启昌 阮凯斌[1] 王玉柱[1] 丁凯[2] HU Qichang;RUAN Kaibin;WANG Yuzhu;DING Kai(College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou 350002, China;Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China)

机构地区：[1]福建农林大学机电工程学院,福建福州350002 [2]中国科学院福建物质结构研究所,福建福州350002

出　　处：《电子元件与材料》2019年第9期61-65,共5页Electronic Components And Materials

基　　金：国家自然科学基金面上项目(61474121);福建省中青年教师教育科研项目(NJT180146);福建农林大学科技创新专项基金项目(CXZX2018032)

摘　　要：N作为ZnO常见的受主杂质,其热稳定性是影响ZnO p型掺杂的关键因素。通过MOCVD法在石英衬底上生长MgZnO∶N薄膜,利用X射线衍射仪、原子力显微镜、扫描电子显微镜、紫外-可见分光光度计、拉曼光谱仪等手段表征薄膜的基本性质和N相对含量,并设计热力学实验分析N的热稳定性机理。结果表明,生长获得了高晶格质量、高透射率、低Mg组分的MgZnO∶N薄膜;相比于ZnO∶N薄膜,MgZnO∶N薄膜具有更高的N含量和热稳定性;热力学实验结果进一步证实Mg3N2具有比Zn3N2更高的热稳定性,这是Mg提高ZnO掺杂N的效率和热稳定性的原因。该工作对ZnO薄膜的p型掺杂研究具有重要指导意义。Nitrogen is often used as acceptor impurity for ZnO films. However, their thermal stability is critical for achieving p-type doping of ZnO films, which is urgent for thorough study. Here Mg-N co-doped ZnO (MgZnO ∶ N) films were grown on quartz substrates by MOCVD. The microstructures and the nitrogen content were characterized by XRD, AFM, SEM, Raman spectroscopy and UV-Vis spectrophotometer. Thermodynamic experiments were performed to determine the mechanism for stabilizing the nitrogen doping by magnesium addition. The results show that the MgZnO ∶ N films have high quality crystallinity, high light transmittance and low magnesium content. The Raman characterization reveal that Mg-N co-doping increase the nitrogen content of ZnO film. The thermodynamic experiments show that higher nitrogen content is achieved due to the higher thermal stability of Mg3N2 than Zn3N2. As a result, magnesium addition is beneficial to increase the thermal stability of N-doped ZnO films. This work has significance for obtaining stable p-type ZnO films.

关 键 词：氧化锌 MOCVD 拉曼光谱 掺杂 退火 热稳定性 

分 类 号：TN304.2[电子电信—物理电子学]