MgB2/Mo多层膜的制备与超导性质  

Fabrication and Superconducting Property of MgB2/Mo Multilayer Films

作　　者：周章渝 肖寒[4] 王松[3] 张青竹[2] 王代强[4] 陈雨青[1] 傅兴华[3] Zhou Zhangyu;Xiao Han;Wang Song;Zhang Qingzhu;Wang Daiqiang;Chen Yuqing;Fu Xinghua(Guiyang University, Guiyang 550005,China;Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China;Key Laboratory of Micro Nano Technology of Guizhou Province,Guiyang 550025,China;Guizhou Minzu University,Guiyang 550025,China)

机构地区：[1]贵阳学院,贵州贵阳550005 [2]中国科学院微电子研究所,北京100029 [3]贵州省微纳电子与软件技术重点实验室,贵州贵阳550025 [4]贵州民族大学,贵州贵阳550025

出　　处：《稀有金属材料与工程》2019年第8期2711-2715,共5页Rare Metal Materials and Engineering

基　　金：国家自然科学基金（11564005）;贵州省科技厅联合基金（黔科合LH字[2015]7300号）;贵州省教育厅创新团队重大研究项目（黔教合KY字[2017]035）;贵州省教育厅重点支持学科项目（黔学位合字ZDXK[2016]21号）;贵州省教育厅高校科技创新团队（黔教合人才团队字[2013]18号）

摘　　要：采用磁控溅射技术(MS)和混合物理化学气相沉积法(HPCVD)在单晶Al2O3基底上制备MgB2/Mo多层膜。通过扫描电子显微镜(SEM)、X射线衍射(XRD)和标准四线法对样品的表面形貌、晶体结构和超导特性进行了测量研究。结果表明,随着后续MgB2沉积温度的提高,各膜层结晶程度进一步提高,晶粒尺寸不断增大,各自保持着良好的物质稳定性。在730℃下生长的MgB2薄膜的超导转变温度Tconset和零电阻温度Tc0分别为39.73和39.53 K,剩余电阻率ρ40K为0.77μΩ·cm,表明样品处于干净极限。The MgB2/Mo multilayer films were fabricated,which the MgB2 layers were grown by the hybrid physics-chemistry vapor deposited(HPCVD),the Mo films were prepared with magnetron sputtering(MS)technology.The surface morphology,crystal structure and superconducting properties of MgB2/Mo multilayer were investigated by scanning electron microscopy,X-ray diffraction,and four-point probe method.The results show that the multilayer can maintain good stability when the crystallization degree is further improved and the grain size increases with the subsequent deposition temperature of MgB2 films.The excellent properties are obtained in the upper MgB2 layer prepared at 730℃,including the superconducting transition temperature(Tconset)and zero resistance temperature(Tc0)for 39.73~39.53 K and the remaining resistivity down to about 0.77 μΩ·cm,which indicates that the films are in the clean limit.

关 键 词：混合物理化学气相沉积法 磁控溅射技术 MgB2/Mo多层膜 

分 类 号：TN405[电子电信—微电子学与固体电子学]