一款6.4 ppm/℃的低功耗带隙基准设计  

A 6.4 ppm/℃ and low power consumption bandgap voltage reference

作　　者：潘鸿泽 王东兴[1] 宋明歆 Pan Hongze;Wang Dongxing;Song Mingxin(School of Sciences,Harbin University of Science and Technology,Harbin 150080,China;Hainan University,Haikou 570228,China)

机构地区：[1]哈尔滨理工大学理学学院,黑龙江哈尔滨150080 [2]海南大学,海南海口570228

出　　处：《电子技术应用》2019年第9期46-49,共4页Application of Electronic Technique

摘　　要：设计了一款低功耗带隙基准,通过引入在温度超过某一温度之后的渐变阻抗,改善了带隙基准的温漂值,同时对传统的带有运放的带隙做出了改进,设计了一款低功耗的结构。仿真结果表明,在电源5V供电情况下,总体功耗为1.2μW,在温度范围-40℃~150℃,温漂为6.40ppm/℃。This paper proposed an innovative CMOS bandgap reference with both low current consumption and high precision over a wide temperature range.The proposed bandgap reference was designed using a standard 0.18 μm CMOS technology.The high precision method can make impedance varied with temperature.While the temperature is rising,the increased impedance can compensate the nonlinear of Vbe.And by improving the structure of conservative bandgap reference,current consumption was extremely shrunk.Measured results have shown the temperature coefficient is 6.4 ppm/℃ over a wide range of-40 ℃~150 ℃.The total power consumption is 1.2 μW while the voltage supply is 5 V.

关 键 词：带隙基准 低功耗 低温漂 渐变阻抗 

分 类 号：TN433[电子电信—微电子学与固体电子学]