基于单根TaON纳米带的光晶体管与紫外到近红外响应（英文）  

Phototransistor Based on Single TaON Nanobelt and Its Photoresponse from Ultraviolet to Near-infrared

作　　者：陶友荣 陈晋强 吴兴才[1] TAO You-Rong;CHEN Jin-Qiang;WU Xing-Cai(Key Laboratory of Mesoscopic Chemistry of MOE,State Key Laboratory of Coordination Chemistry,School of Chemistry and Chemical Engineering,Nanjing University,Nanjing 210023,China)

机构地区：[1]南京大学化学化工学院教育部介观材料重点实验室配位化学国家重点实验室

出　　处：《无机材料学报》2019年第9期1004-1010,共7页Journal of Inorganic Materials

基　　金：National Natural Science Foundation of China(21673108);Open Foundations of State Key Laboratory of Coordination Chemistry(SKLCC1622)

摘　　要：用Ta2O5纳米带模板转化法控制合成TaON纳米带,典型的纳米带长约0.5 cm,横截面积40 nm×200 nm^400 nm×5600 nm。在SiO2/Si基片上加工出TaON单根纳米带的场效应晶体管;该晶体管的电子迁移率和开关比分别为9.53×10^–4cm^2/(V·s)和3.4,在254~850 nm范围内显示良好的光响应。在405 nm (42 mW/cm2)的光照下,外加5.0 V的偏压时,光响应为249 mA/W,光开关比为11。因此,该器件具有良好的光探测性, TaON纳米带可作为光电子器件的候选材料。另外,实验还控制合成出Ta2O5@TaON纳米带,并加工成单根纳米带的场效应晶体管,虽然相同光照条件下的光响应弱于TaON纳米带,但仍算是一种好的光电材料。TaON nanobelts(NBs) were controllably synthesized by Ta2O5 NBs template-conversion method. The typical NBs have cross-sections of 40 nm×200 nm–400 nm×5600 nm, and lengths up to about 0.5 cm. A field effect transistor(FET) based on single TaON NB was fabricated on SiO2/Si substrate. The electronic mobility and on-off ratio of the nanobelts are 9.53×10^–4cm^2/(V·s) and 3.4, respectively. The FET shows good photoresponses from 254 nm to 850 nm. Under irradiation of 405 nm light(42 mW/cm2), the responsivity is 249 mA/W at a bias of 5.0 V, and the photoswitch current ratio is 11. Therefore, the phototransistor shows a good photodetectivity, and TaON NBs may become good candidates for fabricating optoelectronic devices. Additionally, Ta2O5@TaON composite NBs were also synthesized, and a FET based on the single NB was fabricated. Under irradiation of the same light, its photoresponse is weaker than TaON NB, but it is still a good optoelectronic material.

关 键 词：TaON纳米带 模板合成 场效应晶体管 光探测器 

分 类 号：TQ174[化学工程—陶瓷工业]