基于GaN HEMT脉冲功率放大器特性的功率控制策略研究  

Research on Power Control Strategy Based on Characteristics of GaN HEMT Pulse Power Amplifier

作　　者：武庆威[1] WU Qingwei(Unit 92941,PLA,Huludao 125000,China)

机构地区：[1]中国人民解放军92941部队

出　　处：《无线电工程》2019年第10期930-933,共4页Radio Engineering

摘　　要：针对国产GaN HEMT脉冲功率放大器在雷达模拟器应用中无法实现有效辐射功率6 dB内衰减控制的实际问题,分析了该类功率管的工作特性,提出了一种通过控制辐射单元数量和组合的控制策略实现雷达模拟器有效辐射功率6 dB内衰减控制的方法,并进行理论计算、仿真分析和实际测试,结果均表明在允许误差1 dB范围内,该控制策略是合理可行的。Aimed at the practical problem that the domestic GaN HEMT pulse power amplifier cannot realize attenuation control within 6 dB of effective radiation power in the application of radar simulator,the working characteristics of this kind of power tube is analyzed,a method for attenuation control of radar radiation simulator equivalent radiation power within 6 dB is proposed by controlling the number and combination of radiation units.The results of theoretical calculation,simulation analysis and actual test show that the control strategy is reasonable and feasible within the allowable error of 1 dB.

关 键 词：氮化镓 有源阵列天线 功率控制策略 

分 类 号：TN722.75[电子电信—电路与系统]