ZnO薄膜中与Zn原子缺陷相关的发光特性研究  

Luminescence properties of ZnO thin films related to Zn atomic defects

作　　者：陈海霞[1] 丁继军[1] CHEN Haixia;DING Jijun(College of Science, Xi’an Shiyou University, Xi’an 710065,China)

机构地区：[1]西安石油大学理学院

出　　处：《功能材料》2019年第9期9083-9085,9092,共4页Journal of Functional Materials

基　　金：国家自然科学基金资助项目(11804273,11447116);陕西省科技计划资助项目(2019GY-170,2016JQ5037);陕西省教育厅科研专项资助项目(16JK1601);西安石油大学博士科研启动基金资助项目(2016BS12)

摘　　要：ZnO薄膜中可见光的发射与缺陷有关,为了研究ZnO薄膜中与Zn原子缺陷相关的发光特性,将不同Zn缓冲层厚度的ZnO薄膜沉积在Si衬底上,且所有样品在400℃下真空中退火1 h,采用X射线衍射谱(XRD)、吸收谱和光致发光谱(PL)表征了样品的晶体结构和光学特性。结果表明,随着Zn缓冲层溅射时间的增加,ZnO薄膜中的紫光峰向长波段发生了红移,且所有的发光峰强度逐渐增加;缓冲层和真空中退火都使得样品中有过量的Zn原子缺陷出现,薄膜中所有的发光峰与Zn原子缺陷相关。Visible emission in ZnO thin films is related to defects. In this paper, in order to study the luminescent properties of ZnO thin films related to Zn atom defects, ZnO thin films with different thickness of Zn buffer layer were deposited on Si substrates, and annealed at 400 ℃ for 1 h. Crystal structure and optical properties were characterized by X-ray diffraction(XRD) patterns, absorption spectra and photoluminescence(PL) spectra. Results show that as the sputtering time of Zn buffer layer increased, the violet peak in ZnO thin films shifted towards longer wavelength, and the intensity of all emission peaks increased gradually. Based on experimental results, it could be concluded that both Zn buffer layer and annealing treatment made excessive Zn atom defects appeare in the samples, and all the emission peaks was related with Zn atom defects.

关 键 词：ZNO薄膜 Zn原子缺陷 晶体结构 光学特性 光发射机制 

分 类 号：O484.4[理学—固体物理]