4H-SiC混合PiN/Schottky二极管电阻建模  

Modeling of Resistance of 4H-SiC Merged PiN/Schottky Diodes

作　　者：杜启雯 陶雪慧[1] DU Qi-wen;TAO Xue-hui(Soochow Universityy Suzhou 215000,China)

机构地区：[1]苏州大学

出　　处：《电力电子技术》2019年第9期117-120,共4页Power Electronics

基　　金：国家自然科学基金(51307113)~~

摘　　要：此处提出一种对碳化硅(SiC)混合PiN/Schottky(MPS)二极管导通电阻建模的方法。通过该模型可计算出MPS二极管在单极、小注入及大注入3种工作模式的导通电阻。在单极模式及小注入模式,该模型考虑了温度对迁移率的影响,而在大注入模式下电流密度成为重要的影响因素。载流子分布被分析并运用于求解该电阻模型。经验证该模型能较准确的预测MPS二极管在各种工作模式的导通电阻。A on-resistance model of silicon carbide (SiC) merged PiN/Schottky (MPS) diodes is presented. With this model, the on-resistance in the three operating modes, namely, unipolar, low-injection and high-injection modes, can be calculated.The effect of temperature on the mobility is considered in the unipolar and low-injection modes, whereas the current density becomes an important role in the high-injection mode.The carrier distribution is analyzed and applied to determine the resistance model.lt is verified that the model can accurately predict the on-resistance of MPS diodes in various working modes.

关 键 词：二极管 工作模式 导通电阻 

分 类 号：TN111[电子电信—物理电子学]