Homogeneous and inhomogeneous magnetic oxide semiconductors  

作　　者：Xiao-Li Li Xiao-Hong Xu 李小丽;许小红(Key Laboratory of Magnetic Molecules&Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science,Shanxi Normal University,Linfen 041004,China;Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology,Linfen 041004,China)

机构地区：[1]Key Laboratory of Magnetic Molecules&Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science,Shanxi Normal University,Linfen 041004,China [2]Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology,Linfen 041004,China

出　　处：《Chinese Physics B》2019年第9期1-8,共8页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2017YFB0405703);the National Natural Science Foundation of China(Grant Nos.61434002,51571136,and 11274214);the Special Funds of Sanjin Scholars Program,China

摘　　要：Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.

关 键 词：magnetic OXIDE SEMICONDUCTORS FERROMAGNETISM MAGNETORESISTANCE 

分 类 号：O4[理学—物理]