Improvement of TE-polarized emission in type-Ⅱ InAlN–AlGaN/AlGaN quantum well  

作　　者：Yi Li Youhua Zhu Meiyu Wang Honghai Deng Haihong Yin 李毅;朱友华;王美玉;邓洪海;尹海宏(School of Information Science and Technology & Tongke School of Microelectronics, Nantong University)

机构地区：[1]School of Information Science and Technology & Tongke School of Microelectronics, Nantong University

出　　处：《Chinese Physics B》2019年第9期343-347,共5页中国物理B（英文版）

基　　金：Project supported by the Talent Introduction Project of Nantong University,China(Grant No.03081055);the National Natural Science Foundation of China(Grant Nos.61874168 and 61505090);Top-notch Academic Programs Project of Jiangsu Higher Education Institutions,China(Grant No.PPZY2015B135);the Six Top Talents of Jiangsu Province,China(Grant No.2016-XCL-052);the Natural Science Foundation of Nantong University,China(Grant Nos.03080666and 14Z003);the Qing Lan Project of Jiangsu Province,China;Key NSF Program of Jiangsu Provincial Department of Education,China(Grant No.15KJA510004)

摘　　要：The optical properties of the type-Ⅱ lineup InxAl1-xN-Al0.59Ga0.41N/Al0.74Ga0.26N quantum well(QW) structures with different In contents are investigated by using the six-by-six K-P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi-Dirac distribution functions of electron fc^n and hole(1-fv^Um) and the approximately equal transverse electric(TE) polarization optical matrix elements(|Mx|^2) for the c1-v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%-53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x^0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13-0.23.It can be attributed to the combined effect of |Mx|^2 and fc^n(1-fv^Um) for the c1-v1, c1-v2, and c1-v3 transitions.The optical properties of the type-Ⅱ lineup InxAl1-xN–Al0.59Ga0.41N/Al0.74Ga0.26N quantum well（QW） structures with different In contents are investigated by using the six-by-six K–P method.The type-Ⅱ lineup structures exhibit the larger product of Fermi–Dirac distribution functions of electron fcn and hole(1-fvUm) and the approximately equal transverse electric（TE） polarization optical matrix elements（|Mx|2） for the c1–v1 transition.As a result, the peak intensity in the TE polarization spontaneous emission spectrum is improved by 47.45%–53.84% as compared to that of the conventional AlGaN QW structure.In addition, the type-Ⅱ QW structure with x～0.17 has the largest TE mode peak intensity in the investigated In-content range of 0.13–0.23.It can be attributed to the combined effect of |Mx|2 and fcn(1-fv Um) for the c1–v1, c1–v2, and c1–v3 transitions.

关 键 词：type-Ⅱ LINEUP quantum well K-P method TRANSVERSE electric(TE) polarized emission 

分 类 号：O471.1[理学—半导体物理]