Performance improvement of 4H-SiC PIN ultraviolet avalanche photodiodes with different intrinsic layer thicknesses  

作　　者：Xiaolong Cai Dong Zhou Liang Cheng Fangfang Ren Hong Zhong Rong Zhang Youdou Zheng Hai Lu 蔡小龙;周东;程亮;任芳芳;钟宏;张荣;郑有炓;陆海(School of Electronic Science and Engineering,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Nanjing University,Nanjing 210093,China;Technology Planning Department,State Key Laboratory of Mobile Network and Mobile Multimedia Technology,ZTE Corporation,Nanjing 210012,China)

机构地区：[1]School of Electronic Science and Engineering,Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials,Nanjing University,Nanjing 210093,China [2]Technology Planning Department,State Key Laboratory of Mobile Network and Mobile Multimedia Technology,ZTE Corporation,Nanjing 210012,China

出　　处：《Chinese Physics B》2019年第9期381-384,共4页中国物理B（英文版）

基　　金：Project supported by the National Key Research and Development Program of China(Grant No.2016YFB0400902);the Priority Academic Program Development of Jiangsu Higher Education Institutions,China

摘　　要：Four 4H-SiCp-i-n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated.Single photon detection efficiency(SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling.Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate(DCR) confirms that the trap-assisted tunneling(TAT) process is the main source of DCR.The temperature coefficient ranges from-2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers.Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.Four 4H-SiCp–i–n ultraviolet(UV) avalanche photodiode(APD) samples PIN-0.1, PIN-0.35, PIN-0.5, and PIN-1.0 with different intrinsic layer thicknesses(0.1 μm, 0.35 μm, 0.5 μm, and 1.0 μm, respectively) are designed and fabricated.Single photon detection efficiency(SPDE) performance becomes better as the intrinsic layer thickness increases, which is attributed to the inhibitation of tunneling.Dark count origin is also investigated, an activation energy as small as 0.22 eV of the dark count rate(DCR) confirms that the trap-assisted tunneling(TAT) process is the main source of DCR.The temperature coefficient ranges from-2.6 mV/℃ to 18.3 mV/℃, demonstrating that the TAT process is dominant in APDs with thinner intrinsic layers.Additionally, the room temperature maximum quantum efficiency at 280 nm differs from 48% to 65% for PIN-0.35, PIN-0.5, and PIN-1.0 under 0 V bias, and UV/visible rejection ratios higher than 104 are obtained.

关 键 词：4H-SIC AVALANCHE PHOTODIODE single photon detection efficiency TUNNELING 

分 类 号：O4[理学—物理]