垂直腔面发射激光器与异质结双极型晶体管集成结构的设计和模拟  

Design and simulation of integration of vertical cavity surface emitting lasers and heterojunction bipolar transistor

作　　者：周广正 李颖 兰天[1] 代京京[1] 王聪聪 王智勇[1] Zhou Guang-Zheng;Li Ying;Lan Tian;Dai Jing-Jing;Wang Cong-Cong;Wang Zhi-Yong(Institute of Laser Engineering, Beijing University of Technology, Beijing 100124, China)

机构地区：[1]北京工业大学激光工程研究院

出　　处：《物理学报》2019年第20期123-129,共7页Acta Physica Sinica

摘　　要：垂直腔面发射激光器(vertical cavity surface emitting lasers,VCSELs)和异质结双极型晶体管(heterojunction bipolar transistor, HBT)都是纵向电流器件,可以集成在同一外延片上,通过HBT基极电流调制VCSELs的输出光功率.本文设计了一种VCSELs与HBT集成结构,该结构包括VCSELs和PNP In Ga P/Ga As HBT,为直接串联结构,并利用PICS3D软件模拟了该集成结构的电光特性.为了模拟能够顺利进行,在模型中加入了过渡集电极.首先将HBT导通,电流由发射极流向过渡集电极,然后增大过渡集电极与N型电极之间的电压,使VCSELs导通且把过渡集电极的电流降为零.由于过渡集电极的电流为零,在实际结构中可以将其移除.模拟结果表明,当电流增益系数为400时,基极电流对输出光功率的最大调制率达到280 mW/m A.本文所设计的集成结构及其模拟方法对光电集成器件(opto-electronic integrated circuit,OEIC)具有一定的指导作用.Vertical cavity surface emitting lasers(VCSELs) are widely used in the field of short-range optical communication and optical interconnection because of their advantages such as low threshold current, large modulation bandwidth, easy two-dimensional integration, easy coupling with optical fibers and low cost. The VCSELs and heterojunction bipolar transistor(HBT) are longitudinal current devices, so they can be well integrated on the same wafer, and the output light power can be modulated by the HBT base current.Integration of VCSELs and HBT are designed in this paper. The VCSELs and PNP In Ga P/Ga As HBT form a direct series structure. The reflectivity of DBR is 99.72% at a resonant wavelength of 850 nm and 99.57% after adding HBT separately. Therefore, the addition of HBT has little influence on the reflectivity of DBR at the resonant wavelength. The electro-optical characteristics of the integrated structure are simulated by using PICS3D software. An interim collector is added into the model in order to ensure that the simulation can be carried out smoothly. Firstly, HBT is conducted and the current flows from the emitter to the interim collector.Then, the voltage across the interim collector and the N-type electrode is increased to make VCSELs conducted and the current of the transition collector drop to zero. The interim collector can be removed from the actual structure because the current is zero. The simulation results show that the current gain coefficient is 400, and the maximum modulation rate of the base current to the output light power rises up to 280 mW/m A. The maximum temperature in the active region increases with the base current increasing, and the output light power first increases and then tends to be saturated. The ac optical gain characteristics of the integrated structure is simulated by PICS3D, and the simulation result shows that cutoff frequency exceeds 1 GHz. The addition of HBT limits the modulation rate of the integrated structure, and further optimization of HBT structure parameters

关 键 词：垂直腔面发射激光器 异质结双极型晶体管 光电集成 

分 类 号：TN322.8[电子电信—物理电子学]