Ce掺杂HfO2薄膜的化学溶液法制备及其铁电性能研究  

Preparation and Ferroelectric Properties of Cerium Doped HfO2 Thin Films by Chemical Solution Method

作　　者：赵紫东 刘恒 郑帅至 廖敏 周益春[1,2] ZHAO Zi-dong;LIU Heng;ZHENG Shuai-zhi;LIAO Min;ZHOU Yi-chun(School of Materials Science and Engineering, Xiangtan University,Xiangtan 411105;Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education,Xiangtan University,Xiangtan 411105 China)

机构地区：[1]湘潭大学材料科学与工程学院,湖南湘潭411105 [2]湘潭大学低维材料及其应用技术教育部重点实验室,湖南湘潭411105

出　　处：《湘潭大学学报（自然科学版）》2019年第3期82-89,共8页Journal of Xiangtan University(Natural Science Edition)

基　　金：国家自然科学基金项目(51702273)

摘　　要：氧化铪基薄膜与金属氧化物半导体(CMOS)工艺高度兼容,具有良好的可微缩性和保持性能,其铁电性的发现引起了科学家们的广泛关注.该文通过化学溶液法在铂(Pt)衬底上制备5mol%和10mol%的铈掺杂氧化铪基(Ce:HfO2)薄膜,并在不同的退火温度条件下对薄膜进行处理.分别利用电滞回线,掠入射X射线衍射(GIXRD)对薄膜的铁电性能和结构进行了测试和表征.研究发现:5mol%的铈掺杂氧化铪薄膜具有铁电性,铈掺杂在氧化铪中诱导了铁电正交相;10mol%的铈掺杂氧化铪薄膜则表现出了反铁电性,最大剩余极化(Pr)为21.02μC/cm^2.实验结果表明,通过调控掺杂浓度,铈元素能诱导出氧化铪薄膜中的铁电相.The discovery of ferroelectricityin hafnium oxide (HfO2) thin film has attracted widespread attention from scientists, due to the complementary metal-oxide-semiconductor (CMOS) highly compatibility, sufficient scalability and satisfactory retention properties of HfO2 based thin films. In this work, HfO2 thin films with different cerium doping contents (5 mol% and 10 mol%) were fabricated by chemical solution method, and the films were treated under different annealing temperature. The ferroelectric properties were characterized by polarization-voltage (P-V) hysteresis loops while the structural properties were investigated by grazing incidence X-ray diffraction (GIXRD). It is found that 5 mol% Ce doped HfO2 thin film exhibited ferroelectricity, while 10 mol% Ce doped HfO2 thin film showed antiferroelctricity, with a maximum remanent polarization (Pr) of 21.02 μC/cm^2 . These results indicate that Ce doing with appropriate content could effectively induce ferroelectricity in HfO 2 thin films.

关 键 词：CE掺杂 铁电薄膜 二氧化铪 化学溶液法 

分 类 号：O484.1[理学—固体物理]