飞秒激光直写掩模制作硅表面微柱阵列  

Fabrication of Micro-Pillar Arrayon Silicon Surface by Femtosecond Laser Direct Writing Mask

作　　者：田亚湘 张帆 丁铠文 满姝 吴碧微 Tian Yaxiang;Zhang Fan;Ding Kaiwen;Man Shu;Wu Biwei(State Key Laboratory of High Performance and Complex Manufacturing, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, China)

机构地区：[1]中南大学机电工程学院高性能复杂制造国家重点实验室

出　　处：《激光与光电子学进展》2019年第18期261-266,共6页Laser & Optoelectronics Progress

基　　金：国家重点研发计划(2017YFB1104300)

摘　　要：提出了一种使用飞秒激光直写掩模加工微柱阵列的方法。利用高重复频率飞秒激光的热氧化效应在硅表面制作出二氧化硅点阵列,然后经氢氧化钾刻蚀得到微柱阵列。相比于传统的制作微柱阵列的方法,使用飞秒激光直写掩模制作微柱阵列的方法工艺简单,成本更低。此外,探究了激光功率、曝光时间和氢氟酸蚀刻对掩模尺寸的影响。这种微柱阵列在减反、传感等领域具有很好的应用价值。A method of fabricating micro-pillar array based on femtosecond laser direct writing mask is presented. Using the thermal oxidation effect of a high-repetition-rate femtosecond laser, the silicon dioxide dot array is formed on the silicon surface. The micro-pillar array is obtained by etching with potassium hydroxide. Compared with the traditional lithography, the proposed method is simple and low-cost. In addition, the influences of laser power, exposure time, and hydrofluoric acide etching on the mask size are investigated. This kind of micro-pillar array has good application value in reflection reducing and sensing.

关 键 词：超快光学 热氧化效应 硅 微柱阵列 氢氧化钾 掩模 

分 类 号：O439[机械工程—光学工程]