Recent progress in epitaxial growth of Ⅲ–Ⅴ quantum-dot lasers on silicon substrate  

作　　者：Shujie Pan Victoria Cao Mengya Liao Ying Lu Zizhuo Liu Mingchu Tang Siming Chen Alwyn Seeds Huiyun Liu 

机构地区：[1]Department of Electronic and Electrical Engineering, University College London

出　　处：《Journal of Semiconductors》2019年第10期36-44,共9页半导体学报（英文版）

基　　金：financial support from the UK EPSRC under grant No. EP/P006973/1;the EPSRC National Epitaxy Facility European project H2020-ICT-PICTURE (780930);the Royal Academy of Engineering (RF201617/16/28);Investissments d’avenir (IRT Nanoelec: ANR-10-IRT-05 and Need for IoT: ANR-15-IDEX-02);the Chinese Scholarship Council for funding

摘　　要：In the past few decades,numerous high-performance silicon(Si)photonic devices have been demonstrated.Si,as a photonic platform,has received renewed interest in recent years.Efficient Si-basedⅢ–Ⅴquantum-dot(QDs)lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴcompounds.Although the material dissimilarity betweenⅢ–Ⅴmaterial and Si hindered the development of monolithic integrations for over 30 years,considerable breakthroughs happened in the 2000s.In this paper,we review recent progress in the epitaxial growth of various Ⅲ–ⅤQD lasers on both offcut Si substrate and on-axis Si(001)substrate.In addition,the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.In the past few decades, numerous high-performance silicon(Si) photonic devices have been demonstrated. Si, as a photonic platform, has received renewed interest in recent years. Efficient Si-based Ⅲ–Ⅴ quantum-dot(QDs) lasers have long been a goal for semiconductor scientists because of the incomparable optical properties of Ⅲ–Ⅴ compounds. Although the material dissimilarity between Ⅲ–Ⅴ material and Si hindered the development of monolithic integrations for over 30 years, considerable breakthroughs happened in the 2000 s. In this paper, we review recent progress in the epitaxial growth of various Ⅲ–Ⅴ QD lasers on both offcut Si substrate and on-axis Si(001) substrate. In addition, the fundamental challenges in monolithic growth will be explained together with the superior characteristics of QDs.

关 键 词：QUANTUM DOTS silicon PHOTONICS EPITAXIAL GROWTH SEMICONDUCTOR laser 

分 类 号：TN248.4[电子电信—物理电子学]