Perspective:optically-pumped Ⅲ–Ⅴ quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates  

作　　者：Wenqi Wei Qi Feng Zihao Wang Ting Wang Jianjun Zhang 

机构地区：[1]Institute of Physics,Chinese Academy of Sciences,Beijing 100190,China [2]Center of Materials Science and Optoelectronic Engineering,University of Chinese Academy of Sciences,Beijing 100049,China

出　　处：《Journal of Semiconductors》2019年第10期45-53,共9页半导体学报（英文版）

基　　金：financial support was provided by the National Natural Science Foundation of China (Nos. 61635011, 11574356, 11434010, 61804177 and 11804382);National Key Research and Development Program of China (Nos. 2016YFA0300600 and 2016YFA0301700);Key Research Program of Frontier Sciences, CAS (No. QYZDB-SSW-JSC009);Ting Wang was supported by the Youth Innovation Promotion Association of CAS (No. 2018011)

摘　　要：Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However,epitaxial growth ofⅢ–Ⅴmaterials on Si encounters the following three major challenges:high density of threading dislocations,antiphase boundaries and thermal cracks,which significantly degrade the crystal quality and potential device performance.In this review,we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001)substrates byⅢ–Ⅴ/Ⅳhybrid epitaxial growth via(111)-faceted Si hollow structures.Moreover,by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band.High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001)substrates are fabricated and characterized.The above results pave a promising path towards the on-chip lasers for optical interconnect applications.Direct epitaxial growth Ⅲ–Ⅴ quantum dot(QD) structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However, epitaxial growth of Ⅲ–Ⅴ materials on Si encounters the following three major challenges: high density of threading dislocations, antiphase boundaries and thermal cracks, which significantly degrade the crystal quality and potential device performance. In this review, we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001) substrates by Ⅲ–Ⅴ/IV hybrid epitaxial growth via(111)-faceted Si hollow structures. Moreover, by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band. High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001) substrates are fabricated and characterized. The above results pave a promising path towards the on-chip lasers for optical interconnect applications.

关 键 词：quantum DOTS silicon PHOTONICS EPITAXIAL growth semiconductor lasers 

分 类 号：TN248.4[电子电信—物理电子学]