碲镉汞雪崩焦平面器件  

HgCdTe avalanche photodiode FPA

作　　者：李浩[1,2] 林春 周松敏[1] 郭慧君 王溪[1] 陈洪雷 魏彦锋[1] 陈路[1] 丁瑞军[1] 何力[1] LI Hao;LIN Chun;ZHOU Song-Min;GUO Hui-Jun;WANG Xi;CHEN Hong-Lei;WEI Yan-Feng;CHEN Lu;DING Rui-Jun;HE Li(Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Science,Shanghai 200083,China;University of Chinese Academy of Science,Beijing 100049,China;ShanghaiTech University,Shanghai 201210,China)

机构地区：[1]中国科学院上海技术物理研究所红外成像材料与器件重点实验室,上海200083 [2]中国科学院大学,北京100049 [3]上海科技大学,上海201210

出　　处：《红外与毫米波学报》2019年第5期587-590,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(61705247)~~

摘　　要：碲镉汞雪崩光电二极管以其高增益、高灵敏度和高速探测的优点成为第3代红外光电探测器的重要发展方向之一.制备了截止波长3.56μm的雪崩光电二极管焦平面器件,面阵规模为16×16.焦平面器件在0~6V偏压下有效像元率大于90%,非均匀性小于20%.6 V偏压下NEPh约为60,过剩噪声因子为1.2.HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. In this paper we report the result on a 1616 arrays of HgCdTe avalanche photodiode with 3.56 μm cutoff wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor close to 1.2.

关 键 词：碲镉汞 雪崩光电二极管 焦平面 噪声等效光子数 过剩噪声因子 

分 类 号：TN215[电子电信—物理电子学]