半导体的禁带宽度与温度关系研究  

Study on Temperature Dependence of Semiconductor Bandgap

作　　者：张熬 陈鹏[1,2] 周婧 李一萌 杨云飞 冒小康 葛成 施毅[1] 张荣[1] 郑有炓[1] ZHANG Ao;CHEN Peng;ZHOU Jing;LI Yimeng;YANG Yunfei;MAO Xiaokang;GE Cheng;SHI Yi;ZHANG Rong;ZHENG Youdou(Key Laboratory of Advanced Photonic and Electronic Materials,School of Electronic Science and Engineering,Nanjing University,Nanjing 210093,CHN;Institute of Optoelectronic at Yangzhou,Nanjing University ?Yangzhou Jiangsu 255009,CHN)

机构地区：[1]南京大学电子科学与工程学院,江苏省光电功能材料重点实验室,南京210093 [2]南京大学扬州光电研究院,江苏扬州225009

出　　处：《光电子技术》2019年第3期160-167,共8页Optoelectronic Technology

基　　金：国家重点研发计划项目(2016YFB0400102);国家自然科学基金(61674076,61422401,51461135002);江苏省自然科学基金(BY2013077,BK20141320,BE2015111);固态照明与节能电子学协同创新中心,江苏省重点学科资助计划,江苏省六大人才高峰(XYDXX-081);集成光电子学国家重点实验室开放课题(IOSKL2017KF03);南京大学扬州光电研究院研发基金;国网山东省电力公司电力科学研究院研发基金

摘　　要：半导体禁带宽度Eg与温度的依赖关系Eg(T)是一个基础的理论课题,对材料特性的认识具有极其重要的意义。目前,对不同半导体材料的Eg(T)研究存在多种半经验的理论模型,尚未形成定论,所以该课题仍然是一个基础研究的热点。文章梳理了近几十年来Eg(T)分析模型的发展历程,分析了Varshni模型以及基于晶格振动和电子声子作用发展出的四个半经验模型的优缺点,提出了新的问题,对Eg(T)研究的进一步发展以及基于声子特性改善光电子器件性能具有指导意义。The dependence of the semiconductor’s forbidden band Eg on temperature Eg(T)is a basic theoretical subject which is of great significance for understanding the properties of material.At present,there are many semi-empirical theoretical models for the Eg(T)study on various different semiconductor materials and no conclusion has yet been established.So it is still a hot topic of basic research.The development of the Eg(T)analysis models in recent decades was combed,the advantages and disadvantages of Varshni model and the four semi-empirical models developed based on lattice vibration and electron-phonon interaction were analyzed,and new questions were raised.The conclusion will have a guiding significance for the further development of Eg(T)research and for improving the performance of optoelectronic devices based on understanding phonon characteristics.

关 键 词：带隙温度依赖 Varshni模型 能带收缩 声子色散 声子特性 热导率 迁移率 

分 类 号：TN201[电子电信—物理电子学]