^(110,112,114)Cd核低能激发谱的n-p-hIBM的唯象研究  

Phenomenolical Investigation on n-p-h Interacting Boson Model in Low-lying Spectra of ~110Cd,~112Cd,~114Cd

作　　者：王培珍[1] 姚士淮[1] 李先胤[1] 

机构地区：[1]安徽大学物理系

出　　处：《安徽大学学报（自然科学版）》1992年第3期28-32,88,共6页Journal of Anhui University(Natural Science Edition)

摘　　要：本文在目前唯(?)IBM—2组态混合工作的基础上,进一步区分质子与质子空穴的自由度。计算^(110’112’114)Cd 核的低能激发谱,并与实验进行比较;分析影响闯入态形成的因素,在计算方法上做出必要的改进。In this paper,the degrees of freedom of the proton and proton-hole biosons are further distinguished within the framework of configuration mixing in the n-p interacting boson model.An improved treatment for the diagonalization of Hamiltonian is given to calculate the low-lying spectra of CD-110,CD-112 and CD-114.The effects of some factors on the formation of intruder states are studied.

关 键 词：闯入态 组态混合 低能激发谱 镉核 

分 类 号：O571.23[理学—粒子物理与原子核物理]