常温下脉冲激光沉积氮化硼薄膜研究  

Study of Deposition of Boron Nitride Films by Pulsed-laser at Room Temperature

作　　者：王金斌[1] 张灿云[1] 钟向丽[1] 杨国伟[1] 

机构地区：[1]湘潭大学材料与光电物理学院,湘潭411105

出　　处：《人工晶体学报》2002年第5期436-439,共4页Journal of Synthetic Crystals

基　　金：国家自然科学基金 (No .5 0 0 72 0 2 2 );湖南省教委基金 (No.0 1C0 6 1)资助项目

摘　　要：由于氮化硼特别是立方氮化硼 (c BN)的独特性质和广泛的应用前景 ,一直受到材料研究工作者的广泛关注。本研究利用脉冲激光在室温下沉积出立方氮化硼薄膜 ,傅立叶变换红外光谱和X射线衍射分析表明在所制备的氮化硼薄膜中 ,立方相的含量很高 ;同时 ,该研究还观察到了氮化硼的另一种高压相—爆炸结构氮化硼 (Explosive BN ,E BN)。本研究同时还讨论了氮化硼薄膜生长的原理。Because of the unique properties and wide prosperous applications of boron nitride,especially cubic-boron nitride,materials researchers are interested in studying them for a long time. In this paper,pulsed-laser deposition has been used to prepare boron nitride films at room temperature.And with the analysis of Fourier transform infrared spectrum (FTIR) and X-ray diffraction (XRD),it is found that the percentage of cubic boron nitride is very high in boron nitride films.On the other hand,another high pressure phase of boron nitride,i.e.explosive boron nitride (E-BN),which was named by the method of its preparation,has been observed in the deposited films.The mechanism of growth of boron nitride films has been discussed,and with high-energy bombarding ions,high quality c-BN film can be deposited at room temperature.

关 键 词：脉冲光辉沉积 室温 立方氮化硼薄膜 爆炸结构氮化硼 

分 类 号：O484.1[理学—固体物理]