Growth of SiGe Films by Cold-wall UHV/CVD Using GeH_4 and Si_2H_6  

作　　者：CHENGBu－wen LIDai－zong 等 

机构地区：[1]StateKeyLab.onIntegratedOptoelectronics,InstituteofSemiconductors,ChineseAcademyofSciences,Beijing100

出　　处：《Semiconductor Photonics and Technology》2000年第3期134-138,共5页半导体光子学与技术（英文版）

基　　金：ChineseHigh -TechnologyResearchPlan (No .863- 30 7- 15- 4 ( 0 3) )andChineseNaturalScienceFund (No .698962 60 )

摘　　要：An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is introduced. SiGe alloys and SiGe/Si multiple quantum wells (MQWs) have been grown by cold-wall UHV/CVD using disilane (Si 2H 6) and germane (GeH 4) as the reactant gases on Si (100) substrates. The growth rate and Ge contents in SiGe alloys are studied at different temperature and different gas flow. The growth rate of SiGe alloy is decreased with the increase of GeH 4 flow at high temperature. X-ray diffraction measurement shows that SiGe/Si MQWs have good crystallinity, sharp interface and uniformity. No dislocation is found in the observation of transmission electron microscopy (TEM) of SiGe/Si MQWs. The average deviation of the thickness and the fraction of Ge in single SiGe alloy sample are 3.31% and 2.01%, respectively.An ultrahigh vacuum chemical vapor deposition (UHV/CVD) system is introduced. SiGe alloys and SiGe/Si multiple quantum wells (MQWs) have been grown by cold-wall UHV/CVD using disilane (Si 2H 6) and germane (GeH 4) as the reactant gases on Si (100) substrates. The growth rate and Ge contents in SiGe alloys are studied at different temperature and different gas flow. The growth rate of SiGe alloy is decreased with the increase of GeH 4 flow at high temperature. X-ray diffraction measurement shows that SiGe/Si MQWs have good crystallinity, sharp interface and uniformity. No dislocation is found in the observation of transmission electron microscopy (TEM) of SiGe/Si MQWs. The average deviation of the thickness and the fraction of Ge in single SiGe alloy sample are 3.31% and 2.01%, respectively.

关 键 词：GESI Quantum well UHV/CV 

分 类 号：TN304.054[电子电信—物理电子学]