National Key Research and Development Program of China(2021YFB0301000);Strategic Pioneer Research Projects of Defense Science and Technology(XDB43020500);Shanghai Sailing Program(20YF1456900)。
We demonstrate a GeSi electro-absorption modulator with on-chip thermal tuning for the first time,to the best of our knowledge.Theoretical simulation proves that the device temperature can be tuned and the effective o...
Fonds de Recherche du Québec-Nature et Technologies;Canada Research Chair;Natural Sciences and Engineering Research Council of Canada Discovery。
Heteroepitaxial growth is a process of profound fundamental importance as well as an avenue to realize nanostructures such as Ge/Si quantum dots(QDs),with appealing properties for applications in opto-and nanoelectron...
Hypertensive intracerebral hemorrhage (HICH) refers to intra cerebral hemorrhage at basal ganglia, thalamus, ventricle, cerebellum and brainstem in patients with history of explicit hypertension disease, excluding sec...
supported by funds from the Coordination for the Improvement of Higher Education Personnel(CAPES);National Council for Scientific and Technological Development(CNPq)。
Objective:To evaluate the antinociceptive activity of perillyl acetate in mice and in silico simulations.Methods:The vehicle,perillyl acetate(100,150 and/or 200 mg/kg,i.p.),diazepam(2 mg/kg,i.p.)or morphine(6 mg/kg,i....
Supported by the National Key Research and Development Program of China(2018YFB1500400-2018YFB1500403);the National Natural Science Foundation of China(61741404,61464007);the Jiangxi Provincial Key Research and Development Foundation(2016BBH80043)
GeSi:H films are prepared by hot-wire chemical vapor deposition(CVD) with high hydrogen dilution, DH=98%. Effects of hot wire temperature(Tw) on deposition rate, structural properties and bandgap of GeSi:H films are s...
Project supports by the Natural Science Foundation of China(Nos.61605232,61674039);the Open Research Project of State Key Laboratory of Surface Physics from Fudan University(Nos.KF2016_15s,KF2017_05)
We present an overview on the recent progress achieved on the controllable growth of diverse GeSi al- loy nanostructures by molecular beam epitaxy. Prevailing theories for controlled growth of Ge nanostructures on pat...
Efficient coupling from the silicon waveguide to the GeSi layer is the key to success in the GeSi electro-absorption (EA) modulator based on evanescent coupling. A lateral taper in the upper GeSi layer has room for ...