硅电极/溶液界面开路电位-时间谱和原子力显微镜在化学镀Ag中的应用研究  

Application Study of Open Circuit Potential-Time Technology and Atomic Force Microscopy on Si(100)/Solution Interface in Ag Electroless Deposition

作　　者：佟浩[1] 王春明[1] 

机构地区：[1]兰州大学化学化工学院,兰州730000

出　　处：《化学学报》2002年第11期1923-1928,共6页Acta Chimica Sinica

基　　金：国家自然科学基金 (No .2 0 0 73 0 17)资助项目

摘　　要：用开路电位 -时间谱技术 ,表征了在硅 (10 0 )表面化学镀银的硅电极 /溶液界面吸附态 .所得结果与原子力显微镜在纳米尺寸上的面结构信息分析结果作了对比 .同时也将该结果与循环伏安法 (CV)结果作了比较 .证明当硅电极表面具有单层吸附Ag+ 离子、表面单层吸附Ag+ 离子发生沉积反应、Ag+ 离子发生本体沉积时的开路电位 -时间曲线有完全不同的特征 .The adsorption state of the Si (100)/solution interface was investigated by using open circuit potential-time technology (Op-t) in the study of electroless deposition of silver. The obtained results were compared with the surface morphology information at nanometer size from atomic force microscopy (AFM). Cyclic voltammetry (CV) was also used for the comparison. It was found that the Op-t curves showed obvious difference for the different interface state such as the monolayer adsorption of Ag+ ions, the electrode reaction of the monolayer deposited Ag+ ions and the bulk deposition of Ag+ ions.

关 键 词：硅电极/溶液 界面 开路电位-时间谱技术 原子力显微镜 硅(100) 表面化学镀 镀银 集成电路 金属薄膜 

分 类 号：TQ153[化学工程—电化学工业]