Ⅲ-Ⅴ族化合物超薄层外延生长新技术——原子层外延  

Novel Epitaxy Growth Technique of Ultra Thin Layer of Ⅲ-Ⅴ Compounds——Atomic Layer Epitaxy

作　　者：齐学参 

机构地区：[1]机电部第13研究所,石家庄050051

出　　处：《半导体情报》1992年第2期1-10,共10页Semiconductor Information

摘　　要：本文概述了Ⅲ-Ⅴ族化合物原子层外延(ALE),重点介绍了脉冲喷射(PJ)-ALF、氯化物-ALE和增强迁移外延(MEE)。ALE生长层厚度对生长参数,如源气体分压、生长温度和生长时间都不敏感,主要取决于ALE周期数目,因此ALE又称“数字外延”。与传统的MBE和MOCVD相比,ALE具有生长层厚度更均匀、缺陷密度更低、选择外廷中无边缘生长以及侧壁外延可控制到单原子层等优点。文中还讨论了ALEⅢ-Ⅴ族化合物电学性能和应用。This paper briefly describes a novel epitaxy growth technique of Ⅲ-Ⅴ compounds——atomic layer epitaxy (ALE). Pulsed-jet (PJ)-ALE, chloride-ALE and migration enhanced epitaxy (MEE) growth techniques are mainly described. The growth thickness of ALE is insensitive to any analogue quantities such as source gas pressures, growth temperature and growth time, and is determined only by the digital quantity cycle of ALE. Therefore ALE is also called 'digital epitaxy'. In comparison with conventional MBE and MOCVD, ALE offers advantages of greater thickness uniformity, fewer surface defects, less edge growth in selective epitaxy and monolayer control in sidewall epitaxy. The electric properties and applications of Ⅲ-Ⅴ compounds grown by ALE are also discussed.

关 键 词：外延生长 Ⅲ-V族化合物 原子层外延 

分 类 号：TN304.23[电子电信—物理电子学]