量子电子器件——谐振隧道热电子晶体管(RHET)  

Quantum Electron Devices: Resonant Tunneling Hot Electron Transistor

作　　者：张汉三[1] 

机构地区：[1]电子部第13研究所,石家庄050051

出　　处：《半导体情报》1992年第5期7-13,36,共8页Semiconductor Information

摘　　要：RHET是一种新型高速功能器件,在这种器件中,电子谐振隧穿量子阱谐振隧道势垒(RTB)从发射极注入到基极中,然后以准弹道方式传输到收集极。其主要特点是,高速的电荷传输和宽的负微分电阻。本文综述了RHET的研究与进展,并介绍了采用RHET构成的集成电路。RHET is a new type of high speed functional device, iu which electron are injected from emitter to base by resonant tunneling through a quantum well resonant tunneling barrier (RTB) and then quasiballistically transferred to collector. The main feature of this device is high speed charge transport and broad regions of negative differential resistance. In this paper, the research and advances on RHET are introduced, and ICs using RHETs are presented.

关 键 词：量子电子学 量子阱 热电子晶体管 

分 类 号：TN201[电子电信—物理电子学]