ZnSe-ZnS应变超晶格的质量鉴别  

Quality Investigation of ZnSe-ZnS Strained-Layer Superlattices

作　　者：江风益[1] 潘传康[1] 范广涵[2] 范希武[2] 

机构地区：[1]江西工业大学,南昌330029 [2]中国科学院长春物理研究所,长春130021

出　　处：《Journal of Semiconductors》1992年第1期22-27,共6页半导体学报（英文版）

摘　　要：本文报道一种鉴别ZnSe-ZnS应变超晶格质量的方法——低密度激发下的光致发光.文中讨论了ZnSe-ZnS应变超晶格的深中心发射是否受到抑制,与其结晶质量有着强烈的依赖关系.当阱宽、垒宽小于它们的临界厚度时,深中心发射能被大大抑制.这种鉴别 ZnSe-ZnS超晶格质量的方法,比看激子峰半高宽可以更灵敏地了解超晶格的质量.A method of quality identification of ZnSe-ZnS strained layer superlattices by photolu-minescence under low-density excitation is reported.Many ZnSe-ZnS SLS were determined bythe photoluminescence.There is a PL emission peak due to gap-edge recombination of ZnSe-ZnS SLS without deep-centre emission for high density excitation such as N2-LASER (337.1nm), and usually is not so for low density excitation such as the high-veltage Hg-Lamp (365nm). However,we only observed a gap-edge emission peak without deep-centre emission in afew ZnSe-ZnS SLS grown by AP-MOCVD under low density excitation. The samples are thoughtto have good quality.

关 键 词：ZnSe-ZnS 超晶格 质量 鉴别 

分 类 号：TN304.2[电子电信—物理电子学]