氢氟酸电解腐蚀硅制备的量子线阵的光致发光  

Photoluminescence of Silicon Quantum Wire Array Fabricated by Electrolytic Etching

作　　者：张丽珠[1] 段家怟 张伯蕊[1] 金鹰[1] 秦国刚[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《Journal of Semiconductors》1992年第3期193-197,共5页半导体学报（英文版）

摘　　要：在氢氟酸溶液中电解腐蚀作为阳极的单晶硅,制备了硅量子线阵.根据其光致发光谱估算了量子线横截面平均边长为2.4—3.1纳米.研究了光致发光带的峰位对单晶硅电阻率,电解液成分,电解电流密度及电解时间等量的依赖关系.Silicon quantum wire array has been fabricated by electrolytic etching single crystallinesilicon which is an anode in hydrofluoric acid solution. According to the photoluminescencespectra, the average diameter of quantum wire was estimated from 2.4 to 3.1 nanometers. Wehave studied the dependence of the energy position of photoluminescence band on the resisti-vity of single crystal, the compoent of electrolyte, electrolytic current density and electrolytictime.

关 键 词：氢氟酸 电解 腐蚀硅 制备 量子线阵 

分 类 号：TN405.98[电子电信—微电子学与固体电子学]