大气中存放的多孔硅的红外吸收与光致发光的时间演化  

Time Evolution of the Infrared Absorption and Photoluminescence of Porous Silicon in Air

作　　者：张丽珠[1] 毛晋昌[1] 张伯蕊[1] 段家忯[1] 秦国刚[1] 朱悟新[2] 

机构地区：[1]北京大学物理系,北京100871 [2]北京有色研究总院北京,100088

出　　处：《Journal of Semiconductors》1992年第11期715-722,共8页半导体学报（英文版）

基　　金：国家自然科学基金;国家教委博士点基金

摘　　要：以氢氟酸阳极氧化单晶硅制备了多孔硅.在室温下测量了多孔硅在大气中存放2小时,26小时,7天和30天后的红外吸收与光致发光谱.观察到与氧有关的局域振动红外吸收增强的速率远大于与氢和与氟有关振动吸收的降低速率; 而其光致发光强度下降的速率则居于两者之间.We have fabricated porous silicon by anodizing single crystal silicon in HF (48 wt. %):H_2O=1:1 and detected the Fourier-transform infrared (FTIR) absorption and photolumine-scence of the porous silicon wafers after exposing them in air for 2h, 26h, 7 days, and 30 days.We have observed that the localized vibrational mode absorption related to oxygen increaseswith time and those related to hydrogen and to fluorine decrease during the exposure time in-creases. The speed of the former is much high er than those of the latter. While the speed ofthe photoluminescence degradation is just between those of the former two.

关 键 词：硅 红外吸收 光致发光 

分 类 号：TN304.12[电子电信—物理电子学]