快速热退火多晶硅薄膜压阻特性研究  

Study of Piezoresistance Properties of Rapid Thermal Annealed Polycrystalline Silicon Films

作　　者：曹子祥[1] 黄永宏 王思杰[1] 陈怀溥 

机构地区：[1]西北大学电子科学系,西安710069

出　　处：《Journal of Semiconductors》1992年第12期756-762,共7页半导体学报（英文版）

摘　　要：本文首先系统的研究了用 LPCVD工艺在温度为 625℃、气相硼硅原子比分别为 1.6 × 10^(-3)和2.0×10^(-3)时淀积的、其后又分别经900℃、1050℃、1150℃ 10秒钟快速热退火(RTA)处理的多晶硅薄膜压阻特性.然后,基于上述结果,着重研究了气相硼硅原子比分别为 1.6×10^(-3)、2.0 × 10^(-3)、4.0 ×10^(-3)和5.0 × 10^(-3)时淀积,其后只经1150℃ 10秒钟快速热退火处理的多晶硅薄膜压阻特性.在上述淀积条件下,与900℃ 30分钟常规热退火(FA)相比较,得到了快速热退火的最佳条件.This paper systematically studies the piezoresistance properties of polysilicon films depo-sited by LPCVD process at temperature of 625℃ and with vapour phase boron-silicon atomicratios of 1.6×10^(-3) and 2.0×10^(-3) and treated with rapid thermal annealings(RTA)at tempe-rarures of 900℃, 1050℃, 1150℃ for 10 seconds. Based on the results, the paper gives specialemphasis to the piezoresistance properties of polysilicon films deposited with vapour phaseboron-silicon atomic ratios of 1.6 ×10^(-3), 2.0 × 10^(-3), 4.0×10^(-3) and 5.0×10^(-3), and treated withrapid thermal annealing at 1150℃ for 10 seconds only. Under the conditions mentioned abo-ve, as compared with conventional furnace annealing (FA) at 900℃ for 30 minutes, the op-timum conditions of RTA have been obtained.

关 键 词：多晶硅 薄膜 退火 压阻特性 

分 类 号：TN304.12[电子电信—物理电子学]