H在Pt/Si上的化学吸附对Pt/Si界面特性的影响  

Effects of H Chemisorption on Properties of Pt/Si Interface

作　　者：徐国定[1] 张涛[1] 

机构地区：[1]河南师范大学物理系,新乡453002

出　　处：《Journal of Semiconductors》1992年第12期750-755,共6页半导体学报（英文版）

摘　　要：本文在一维紧束缚近似下,利用格林函数方法和复能积分技术,研究了H在 Pt/Si上的化学吸附对 Pt/Si界面特性的影响。分别以紧束缚的 d轨道模型和sp杂化轨道模型描述金属 Pt和衬底Si,计算了在H被吸附前、后 Pt/Si的界面能和吸附前、后 Pt的厚度对局域在Si一边的界面电子态密度的影响.The effects of H chemisorption on Pt/Si on the properties of Pt/Si interface are investi-gated by using the Green's-function method and the complex-energy-plane integration techni-que within the limits of one-dimensional tight-binding approximation. The metal Pt and sub-strate Si are described by the finite d-orbital chain and the semi-infinite sp-hybrid orbitalchain, respectively. The Pt/Si interface energy and the interface local density of states at Siside are computed pefore and after H was absorbed.

关 键 词：氢 Pt/Si 化学吸附 金属硅化物 

分 类 号：TN304.2[电子电信—物理电子学]