Pb/Si(001)系统界面反应的ELS研究  

ELS Investigation of Interfacial Reaction of Pb/Si(001) System

作　　者：赵汝光[1] 贾金峰[1] 杨威生[1] 

机构地区：[1]北京大学物理系,北京100871

出　　处：《Journal of Semiconductors》1992年第12期767-772,共6页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：用可调探测深度电子能量损失谱(TRLS)及俄歇电子谱(AES)研究 Pb/Si(001)系统界面反应.结果表明:在室温下,Pb与Si发生相互作用、强烈互混,形成界面相,其厚度约(15±3)A,同时此相有确定的Pb/Si原子比,其根据是这个相有能量确定的、峰宽很窄的体等离激元峰,此峰能量为10.7eV,峰宽与Si的体等离激元峰相似.互混发生在氧污染很小的条件下,仅0.6ML 的氧就足以阻止互混的发生,形成陡变的无相互作用的 Pb/Si 界面.Tunable-sampling-depth electron energy loss spectroscopy and Auger electron spectrosco-py have been used tc investigate the room temperature interracial reaction of the Pb/Si(001)system. Our results show that strong intermixing between Pb and Si happens at room tempe-rature, resulting in formation of an interracial phase which has a maximum thickness of about15±3 A together with a specific Pb/Si atomic ratio as indicated by the fact that the bulk plas-mon of this phase has a specific energy of 10.7 eV and a peak width as narrow as that of thesilicon. The intermixing can be substantially reduced by small amount of oxygen contamina-tion. 0.6 monolayers of oxygen is enough to halt the intermixing completely. This might be re-sponsible for the fact that the Pb/Si(001) interface was reported as unreactive and abrupt.

关 键 词：金属半导体 肖特基势垒 Pb/Si 

分 类 号：TN304.9[电子电信—物理电子学]