Floating Body Effect in Partially Depleted SOI nMOSFET with Asymmetric Structure and Ge-Implantation  

采用非对称结构和注Ge的部分耗尽SOI nMOSFET的浮体效应(英文)

作　　者：刘运龙[1] 刘新宇[1] 韩郑生[1] 海潮和[1] 钱鹤[1] 

机构地区：[1]中国科学院微电子中心,北京100029

出　　处：《Journal of Semiconductors》2002年第11期1154-1157,共4页半导体学报（英文版）

摘　　要：The floating body effect of an asymmetric and Ge implanted partially depleted 0 8μm SOI nMOSFET is investigated.It is found that the drain breakdown voltage can be improved by about 1V and that the anomalous subthreshold slope and kink effect are also lessened.It is believed that the shallow junction in the source and defect states introduced by Ge implantation are responsible for the reduction of the floating body effect.研究了一种采用非对称结构和注 Ge的部分耗尽 0 .8μm SOI n MOSFET的浮体效应 ,实验结果表明这种结构能够提高漏端击穿电压约 1V,减轻反常亚阈值斜率和 kink现象 .浮体效应的减少是由于源区的浅结和注 Ge引入的晶体缺陷减少了寄生的横向

关 键 词：SOI nMOSFET floating body effect Ge  implantation 

分 类 号：TN386.1[电子电信—物理电子学]