检测薄膜压电形变的双光束探测干涉仪的设计  

Design of Double-Beam Interferometer for Detecting Piezoelectric Strain of Thin Film

作　　者：黄傲[1] 施柏煊[1] 陈王丽华[2] 

机构地区：[1]浙江大学现代光学仪器国家重点实验室,浙江杭州310027 [2]香港理工大学应用物理系

出　　处：《光电工程》2002年第5期45-48,共4页Opto-Electronic Engineering

基　　金：香港特区政府创新科技基金资助(ITF AF147/98)资助

摘　　要：为了检测压电薄膜的在电场作用下的微小形变,同时避免基底弯曲效应的影响,设计了一 种双光束探测干涉仪,通过反馈控制和锁相检测技术,实现了高稳定度、高分辨力的目标,最小可探测形变可达到0.001nm。系统采用计算机控制测量和数据处理,使测量更加便捷、准确。In order to measure micro-strain of piezoelectric thin film under action of electric field and avoiding the impact of substrate bending effect, a double-beam interferometer is designed. The objective of high stability and high resolution is achieved through feedback control and phase-locking detection technique. The minimum detectable strain is as small as 0.001nm. With measurement and data processing are controlled by a computer, the system has the advantages of convenience, fast measurement speed and high accuracy.

关 键 词：双光束干涉仪 压电效应 弯曲效应 压电薄膜 变形测量 

分 类 号：TH744.3[机械工程—光学工程]