黄-李斯因子及温度对多声子无辐射跃迁的影响  

The Effect of Temperature Huang-Rhys in the Multiphonon Nonradiative Transitions

作　　者：王德民[1] 贾荣谊 阎立根 

机构地区：[1]北京大学技术物理学系 [2]北京师范大学物理学系

出　　处：《北京大学学报（自然科学版）》1992年第5期622-630,共9页Acta Scientiarum Naturalium Universitatis Pekinensis

摘　　要：本文将黄昆等人的多声子统计分布理论与严格公式进行对比,在强、弱耦合及不同的晶格弛豫能分配形式下,分别计算了多声子无辐射跃迁几率因式I(e)随温度的变化情况,并由此得出统计分布理论的适用范围:由计算表明,对于高温、强耦合二者将出现较大偏差。但此时可采用高温强耦合近似化为单频膜式来进行讨论。此外,I(e)对表征晶格弛豫强度的参量S的变化较为灵敏,一般存在一个极值区域,且它随着跃迁能量的增大将向S增大的方向移动。This paper presents the calculated results of multiphonon nonradiative transitions probability factors I(e) by both of Huang Kun's statistical distribution theory of phon-ons and rigorous formula at finite temperature with six-frequency model. These results show that the both of them are very consistent at weak coupling in any temperature. However,the remarkable deviation between statistical I(e) and rigorous' I(e) will appear at strong coupling, high temperature. Moreover, the deviation will increase with the rising of temperature. In addition, the I(e) is highly sensitive with the variation of Huang-Rhys factor. In particular, it has existent a region of maximum value for a proper coupling strength.

关 键 词：晶格驰豫 温度 多声子 无辐射跃迁 

分 类 号：O471.4[理学—半导体物理]