MoS_2基板上外延生长C_(60)薄膜的分子动力学模拟  

Molecular Dynamics Simulation of C_(60) Thin Films Epitaxial Growing on MoS_2

作　　者：陈荣新[1] 乌明奇[1] 顾昌鑫[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术》2002年第5期360-365,共6页Vacuum Science and Technology

基　　金：上海市科学技术委员会;上海市应用物理中心资助项目 (No .OOJC14 0 8;No .0 114nm0 69)

摘　　要：外延生长异质薄膜通常要求材料之间晶格匹配 ,然而利用范德瓦尔斯作用外延生长时 ,晶格匹配要求显著降低。实验上已经得出了在MoS2 基板上外延生长C60 薄膜的结果 ,本文用分子动力学计算机模拟方法对MoS2 基板上外延生长C60 薄膜进行了研究 ,证实范德瓦尔斯外延可以克服较大的晶格失配问题。Lattice mismatching between different materials significantly forbids epitaxial growth of hetero structured films.However,if van der Waals force is mainly responsible for the epitaxial growth,lattice matching requirements can be considerably relaxed.Molecular dynamics simulation of the epitaxial growth of C 60 on MoS 2 substrate,which was already reported as an experimental success for a large lattice mismatching system,was performed.The simulated results show that van der Waals force makes it possible to epitaxially grow hetergenous films in the case of some highly lattice mismatching systems.

关 键 词：MoS2基板 外延生长 C60 薄膜 范德瓦尔斯外延 晶格失配 分子动力学模拟 富勒烯 硫化钼 

分 类 号：O484[理学—固体物理] TB43[理学—物理]