强流离子束辐照加热过程的数值计算  

A NUMERICAL ANALYSIS OF HEATING PROCESS OF A HIGH CURRENT ION BEAM IRRADIATION

作　　者：田人和[1] 顾永俶[1] 贺凯芬[1] 卢武星[1] 张荟星[1] 

机构地区：[1]北京师范大学低能核物理研究所,北京市新外大街100875

出　　处：《北京师范大学学报（自然科学版）》1992年第1期49-54,共6页Journal of Beijing Normal University(Natural Science)

基　　金：国家"八六三"计划资助项目

摘　　要：考虑瞬态的热传导过程,用有限差分方法计算了强流恒定离子束辐照过程的温度效应.由温升曲线的计算可知,对中等以上的注量率(>10^(13)cm^(-2)s^(-1))来说,快速注入过程都将是非稳态的,由此可知对强流离子束辐照过程进行瞬态热传导分析是必要的.若注量固定,晶片表面温度与离子能量的关系在低能部分(<100keV)很平缓,在高能部分很陡峭,在大注量注入情况下,降低靶座温度以抑制晶片表面温升是可行的方法之一.Taking account of the transient thermoconduction process, the effect of heating of a high constant-current ion beam irradiation process is calculated by using of the finite difference method. From the temperature raise curve it is indicated that for the dose rate over the middle level (>10^(13)cm^(-2)·S^(-1)), the rapid ion implantation process will be non-steady. Therefore it is necessary to analyze the high current ion beam irradiation process by using of the transient thermoconduction equation. For the same dose, the variation of surface temperature with the ion energy is smooth in the low energy region (<100 keV), whereas rather precipitous in the high energy region. Under the condition of large dose, it is a feasible method to decrease the temperature of wafer holder in order to reduce the surface temperature of the wafer.

关 键 词：离子注入 离子束辐照 加热 

分 类 号：O532.26[理学—等离子体物理]