后注Ar^+对高能注P^+硅中二次缺陷的影响  

THE EFFECT OF POST-IMPLANTED Ar^+ ON THE SECONDARY DEFECT IN HIGH ENERGY P+-IMPLANTED SILICON

作　　者：田人和[1] 卢武星[1] 顾永俶[1] 高愈遵 

机构地区：[1]北京师范大学低能核物理研究所,100875 [2]北京有色金属研究总院,北京新外大街100088

出　　处：《北京师范大学学报（自然科学版）》1992年第4期516-520,共5页Journal of Beijing Normal University(Natural Science)

基　　金：国家自然科学基金

摘　　要：用剖面的电子显微术(XTEM)研究了后注Ar^+对高能注P^+硅中二次缺陷的影响。结果表明,后注Ar^+像后注Si^+一样能够减少高能注P^+硅中的二次缺陷。但这种效果与退火过程密切相关,退火应该在后注Ar^+之后,而不是在其之前。实验还发现,在适当退火条件下,后注Ar^+产生的新二次缺陷比后注Si^+产生的要少一些。物理机制分析认为,后注Ar^+减少二次缺陷的物理机制与后注Si^+的是相似的。By using cross-sectional transmission electron microscopy(XTEM) the effect of post-implanted Ar^+ on the secondary defects in high energy P^+-implanted silicon are investigated. The results show that as well as post-implanted Si^+, post-implanted Ar^+ can reduce the secondary defects in high energy P^+-implanted silicon. However, this reduction is closely related to annealing process. The annealing should be carried out after the post-implantation of Ar^+, but not before it. It is found that under the suitable annealing conditions, the new secondary defects caused by post-implantation of Ar^+ are a little bit less than that caused by post-implantation of Si^+. The analysis considers that the physical mechanism of the reduction of secondary defects by post-implantation of Ar^+ is same as that by the posti-mplantation of Si^+.

关 键 词：离子注入 二次缺陷 硅 

分 类 号：TN305.3[电子电信—物理电子学]