反熔丝FPGA的电离总剂量效应与加固技术  

Total ionizing dose effects and hardening techniques of antifuse FPGAs

作　　者：赵聚朝[1] 

机构地区：[1]中国工程物理研究院电子工程研究所

出　　处：《核电子学与探测技术》2002年第6期559-562,共4页Nuclear Electronics & Detection Technology

摘　　要：简要叙述了商用 FPGA用于空间领域时面临的抗电离总剂量加固问题 ,对 Actel公司反熔丝 FPGA的电离总剂量效应进行了较为详细的分析 ,包括制造工艺、偏置条件、电泵对总剂量效应的影响。并特别指出 ,电泵的退化可能会对系统造成较为严重的后果 ,因此 ,必须重视加电后的瞬态变化。提出了可以采取的加固措施。Total ionizing dose hardening of commercial FPGAs for space applications is presented briefly in this paper. Total ionizing dose effects of Actel antifuse FPGAs are analysed in detail, including effects of fabrication technologies, bias condition and charge pump. The results show that degradation of the internal charge pump is a key factor in severe degradation of the systems. It is vitally important that radiation testing should include special measurements of start-up transients. Lastly, available hardening techniques are discussed.

关 键 词：反熔丝FPGA 电离总剂量效应 加固技术 现场可编程门阵列 抗电离辐射 

分 类 号：TN47[电子电信—微电子学与固体电子学]