辐照对聚酰亚胺基板铜薄膜金属化TiN阻挡层的影响  

Irradiation Behaviors of TiN Diffusion Barriers in Cu/PI Substrates

作　　者：刘杨秋[1] 梁彤祥[1] 倪晓军[1] 付志强[1] 

机构地区：[1]清华大学核能技术设计研究院新材料研究室,北京102201

出　　处：《电子元件与材料》2002年第12期11-12,16,共3页Electronic Components And Materials

基　　金：清华大学基础研究基金资助项目(993235)

摘　　要：采用物理气相沉积方法在聚酰亚胺基板上沉积Cu薄膜,利用TiN阻挡Cu元素向聚酰亚胺基板内部扩散。研究了在60Co-g射线辐照条件下,TiN阻挡层的阻挡效果,扫描俄歇微探针谱图分析表明:TiN层可以有效地阻挡Cu元素向聚酰亚胺基板内的扩散。当照射剂量大于2105 Gy后,TiN失去阻挡Cu元素扩散的效果。Polyimide (PI) substrates with copper metallization offer the advantages of lower dielectric constant, better electromigration performance and lower thin film resistivity as compared with other substrates. In this study, thin copper film was deposited on PI substrates by physical vapor deposition (PVD) method. Amorphous TiN film prepared by PVD was used as diffusion barrier between Cu and PI. Effects of 60Co- ray irradiation on the behavior of TiN diffusion barriers were investigated. The spectra of AES depth profile indicated that TiN prevented Cu from diffusing into PI, when the irradiation dose reached 200 thousands Gy, TiN lost its effectiveness because of lots of defects generated in it.

关 键 词：TiN阻挡层 聚酰亚胺基板 氮化钛 铜薄膜金属化 辐照 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN304