一种通过优化热处理条件提升CIS器件性能的方法  

A Method for Improving the CIS Performance by Optimizing the Heat Treatment Conditions

作　　者：王艳生 焦爽 秋沉沉 徐炯 WANG Yansheng;JIAO Shuang;QIU Chenchen;XU Jiong(Shanghai Huali Integration Circuit Corporation,Shanghai 201203,China; Shanghai Huali Microelectronics Corporation,Shanghai 201203,China.)

机构地区：[1]上海华力集成电路有限公司,上海201203 [2]上海华力微电子有限公司,上海201203

出　　处：《集成电路应用》2019年第8期40-42,共3页Application of IC

基　　金：上海市经济和信息化委员会软件和集成电路产业发展专项基金(1500204)

摘　　要：成像暗线噪声和满阱电容是影响互补型金属氧化物半导体图像传感器(CMOS Image Sensor,CIS)芯片成像质量的重要性能参数。为了在单位面积内集成更多像素单元,单个像素尺寸不断缩小。一般来说,CIS芯片满阱电容与像素尺寸成正比。基于小尺寸像素而获得高满阱电容需要不断提升光电二极管的掺杂浓度。光电二极管阵列的窄间距和高掺杂浓度导致光电二极管间,光电二极管与像素区器件间的隔离效果变差,成像暗线失效严重。探索一种通过热处理工艺改善隔离效果的新方法。基于快速热氧化工艺和快速热退火工艺升温曲线的差异,通过优化热处理工艺条件,改善像素区隔离效果,将成像暗线噪声失效率降低73.2%,提升CMOS图像传感器产品良率。Dim line noise and full well capacity were key parameters that affect the imaging quality of CMOS Image Sensor(CIS).In order to integrate more pixel units per unit area, the size of individual pixels is constantly reduced. In general, full well capacitance of CIS is proportional to pixel size. To obtain high full well capacitance performance based on small pixel size, the doping concentration of photodiode need increased. The narrow spacing and high doping concentration of the photodiode array lead to the poor isolation effect between the photodiode and the devices in the pixel area, and the dim line noise failure is serious. In this paper, a new method of improving isolation effect by heat treatment process has been explored. Based on the different heating curve between rapid thermal oxidation process and the rapid thermal anneal process, we have optimized the heat treatment process conditions. As a result, the dim line noise loss was reduced by 73.2% and the yield of CMOS image sensor products was improved.

关 键 词：热处理工艺 成像暗线噪声 满阱电容 CMOS图像传感器 

分 类 号：TN405[电子电信—微电子学与固体电子学]