雾化施液单晶硅互抛抛光速率实验研究  

Experimental Study on Atomization Mutual Polishing Rate of Single Crystal Silicon

作　　者：李庆忠 孙苏磊 李强强 LI Qing-zhong;SUN Su-lei;LI Qiang-qiang(College of Mechanical Engineering,Jiangnan University,Wuxi 214122,China)

机构地区：[1]江南大学机械工程学院

出　　处：《硅酸盐通报》2019年第8期2369-2374,2383,共7页Bulletin of the Chinese Ceramic Society

基　　金：国家自然科学基金(51175228)

摘　　要：调节自配抛光液的H 2O 2含量、pH值、抛光盘转速和抛光压力,通过电化学实验,探究单晶硅互抛抛光过程中抛光工艺参数对腐蚀电位、腐蚀电流和抛光速率的影响规律,并解释其电化学机理。实验结果表明:雾化施液单晶硅互抛抛光速率随着pH值、H 2O 2浓度和抛光盘转速的增大呈现先增大后减小的趋势,并在pH值为10.5、H 2O 2浓度为2%、抛光盘转速为70 r/min处达到最大值,随着抛光压力的不断增大而增大;通过雾化施液单晶硅互抛抛光实验得到合理的工艺参数:pH值为10.5、H 2O 2浓度为2%、抛光盘转速为60 r/min、抛光压力为7 psi,在该参数下,硅片的抛光速率达到635.2 nm/min,表面粗糙度达到4.01 nm。Adjust the H 2O 2 content,pH value,polishing rotation speed and polishing pressure,and explore the effect law of polishing process parameters on corrosion potential,corrosion current and polishing removal rate in the process of mutual polishing by electrochemical experiment,so as to explain the electrochemistry mechanism.The experiment result shows:the polishing removal rate of atomization mutual polishing increases with the increasing of pH value,H 2O 2 concentrate and polishing rotation speed of polishing pad at first,then it will decrease,and the maximum appears at the point of pH=10.5,H 2O 2 concentrate=2%,polishing rotation speed of polishing pad=70 r/min.Moreover,it increases continuously with the increasing of polishing pressure.The reasonable technological parameters are obtained by atomization mutual polishing experiment of single crystal silicon,which are pH=10.5,H 2O 2 concentrate=2%,rotate speed of polishing pad=60 r/min,polishing pressure=7 psi,the polishing removal rate of silicon wafer achieves 635.2 nm/min,and the surface roughness achieves 4.01 nm under the above parameters.

关 键 词：雾化互抛抛光 抛光参数 电化学 抛光速率 

分 类 号：TU161.14[建筑科学—建筑理论]