基于3μm-SOI的波分复用/解复用器与电吸收型VOA的单片集成（英文）  

Monolithic integration of a wavelength division multiplexer/demultiplexer and electro-absorption VOAs based on 3 μm-SOI

作　　者：袁配 王玥[2] 吴远大[2,3] 安俊明 祝连庆[1] Yuan Pei;Wang Yue;Wu Yuanda;An Junming;Zhu Lianqing(Beijing Laboratory of Optical Fiber Sensing and System,Beijing Information Science&Technology University,Beijing 100016,China;State Key Laboratory on Integrated Optoelectronics,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China)

机构地区：[1]北京信息科技大学光纤传感与系统北京实验室,北京100016 [2]中国科学院半导体研究所集成光电子学国家重点实验室,北京100083 [3]中国科学院大学材料与光电研究中心,北京100049

出　　处：《红外与激光工程》2019年第8期230-236,共7页Infrared and Laser Engineering

基　　金：高等学校学科创新引智计划(先进光电子器件与系统学科创新引智基地D17021)

摘　　要：波分复用/解复用器与可调光衰减器的是光通信系统中的重要元器件。为了得到制备工艺简单、响应速度快的二者的单片集成芯片,并且考虑到其与其他不同光器件的集成可能性,在绝缘体上硅材料制作了16通道、信道间隔200GHz的阵列波导光栅复用/解复用器与电吸收型可调光衰减器的单片集成。该器件的片上损耗小于7dB,串扰小于-22dB。电吸收型VOA在20dB的衰减量下的功耗为572mW(106mA,5.4V)。此外,该器件可以实现光功率的快速衰减,在0~5V的外加方波电压下,VOA上升及下降时间分别为50.5ns和48ns。Wavelength division multiplexers/demultiplexers and variable optical attenuators(VOAS) are key devices used in optical communication systems. In order to get their monolithic integrated chip with simple fabrication process and fast time response, and considering the possibility of it to integrate with other different optical devices, a 16-channel 200 GHz arrayed waveguide grating(AWG) multiplexer/demultiplexer was monolithically integrated with electro-absorption variable optical attenuators on a silicon-on-insulator(SOI) platform. The on-chip loss was less than 7 d B and the crosstalk was less than-22 dB. The power consumption of the electro-absorption VOA is 572.4 mW(106 mA, 5.4 V) at 20 dB attenuation. Besides, the device provides fast optical power attenuation, and in a 0-5 V square voltage,the rising/falling time of the VOA is 50.5 ns and 48 ns, respectively.

关 键 词：阵列波导光栅 可调光衰减器 硅基光子学 绝缘体上硅 

分 类 号：TN256[电子电信—物理电子学]