MHz高压脉冲电源设计  

Design of MHz high voltage pulse power supply

作　　者：姜松 吴彤 李孜 饶俊峰 Jiang Song;Wu Tong;Li Zi;Rao Junfeng(School of Mechanical Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China)

机构地区：[1]上海理工大学机械工程学院

出　　处：《强激光与粒子束》2019年第9期92-96,共5页High Power Laser and Particle Beams

基　　金：上海市扬帆项目(19YF1435000);国家自然科学基金青年项目(51707122)

摘　　要：设计了一款基于金属氧化物半导体场效应晶体管(MOSFET)开关的高压高频脉冲发生器,采用多个以光纤信号隔离触发的串联MOSFET作为高压开关,并由FPGA提供控制信号。该发生器由相同的MOSFET管部分组成,并联并按顺序触发,与参考信号同步。所述电路和工作模式克服了MOSFET管发生器的功耗限制,使脉冲重复率显著提高。详细介绍了该MHz高压脉冲发生器的工作原理和制作过程,然后进行了初步试验,验证了该发生器的性能。该电路在1 MHz的高重复率下,输出上升时间为十几ns、脉宽为百ns、电压幅值大于1 kV的平顶脉冲。In this paper,a high voltage and high frequency pulse generator based on metal oxide semiconductor field effect transistor(MOSFET)switch is designed.Several series MOSFETs triggered by optical fiber signal isolation are used as high voltage switches,and the control signal is provided by the FPGA.The generator is composed of the same MOSFET tube,triggered in parallel and in sequence,synchronized with the reference signal.The circuit and working mode overcome the power consumption limitation of the MOSFET tube generator and significantly improve the pulse repetition rate.This paper introduces the working principle and fabrication process of the MHz high voltage pulse generator in detail.The preliminary test was carried out to verify the performance of the generator.Under the high repetition rate of 1 MHz,the output flat-top pulse had the rise time more than 10 ns,the pulse width 100 ns,and the voltage amplitude greater than 1 kV.

关 键 词：脉冲电源 功率MOSFET NS脉冲 1 MHz重频 脉冲合成 

分 类 号：TM832[电气工程—高电压与绝缘技术]